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Secondary LDO Regulators for Local Power Supplies
Dual-output Secondary Fixed/Variable Output LDO Regulators for Local Power Supplies
BA3259HFP,BA30E00WHFP
No.09026EAT02
Description The BA3259HFP and BA30E00WHFP are 2-output, low-saturation regulators. These units have both a 3.3 V fixed output as well as a variable output with a voltage accuracy of 2%, and incorporate an overcurrent protection circuit to prevent IC destruction due to output shorting along with a TSD (Thermal Shut Down) circuit to protect the IC from thermal destruction caused by overloading. Features 1) Output voltage accuracy: 2%. 2) Reference voltage accuracy: 2% 3) Output current capacity: 1 A (BA3259HFP), 0.6 A (BA30E00WHFP) 4) Ceramic capacitor can be used to prevent output oscillation (BA3259HFP) 6) Low dissipation with two voltage input supported (BA30E00WHFP) 7) Built-in thermal shutdown circuit 8) Built-in overcurrent protection circuit Applications Available to all commercial devices, such as FPD, TV, and PC sets besides DSP power supplies for DVD and CD sets. Product Lineup Part Number BA3259HFP BA30E00WHFP
Output voltage Vo1 3.3 V 3.3 V
Output voltage Vo2 0.8 V to 3.3 V 0.8 V to 3.3 V
Output Current Io1 1 A max 0.6 A max
Output Current Io2 1 A max 0.6 A max
Package HRP5 HRP7
Absolute Maximum Ratings BA3259HFP Parameter Applied voltage Power dissipation Operating temperature range Ambient storage temperature range Maximum junction temperature Symbol Vcc Pd Topr Tstg Tjmax Limit 15 *1 2300
*2
BA30E00WHFP Units V mW C C C Parameter Applied voltage Power dissipation Operating temperature range Ambient storage temperature range Maximum junction temperature Symbol Vcc Pd Topr Tstg Tjmax Limit 18 *1 2300
*2
Units V mW C C C
0 to 85 -55 to 150 150
-25 to 105 -55 to 150 150
*1 Must not exceed Pd. *2 Derated at 18.4 mW/C at Ta>25C when mounted on a glass epoxy board (70 mm 70 mm 1.6 mm).
Recommended Operating Conditions BA3259HFP Parameter Symbol Min. Typ. Max. Unit Input power supply Vcc 4.75 - 14.0 V voltage 3.3 V output current Io1 - - 1 A Variable output current Io2 - - 1 A
BA30E00WHFP Parameter Input power supply voltage 1 Input power supply voltage 2 3.3 V output current Variable output current
Symbol Vcc1 Vcc2 Io1 Io2
Min. 4.1 2.8 - -
Typ. Max. Unit - - - - 16.0 Vcc1 0.6 0.6 V V A A
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1/8
2009.04 - Rev.A
BA3259HFP,BA30E00WHFP
Electrical Characteristics BA3259HFP (Unless otherwise specified, Ta=25C, Vcc=5 V, R1=R2=5 k) Parameter Symbol Min. Typ. Max. Circuit current IB - 3 5 [3.3 V Output Block] Output voltage 1 Vo1 3.234 3.300 3.366 Minimum I/O voltage difference 1 Vd1 - 1.1 1.3 Current capability 1 Io1 1.0 - - Ripple rejection 1 R.R.1 46 52 - Input stability 1 VLINE1 - 5 15 Load stability 1 VLOAD1 - 5 20 Temperature coefficient of output Tcvo1 - 0.01 - voltage 1 *3 [Variable output] Reference voltage VREF 0.784 0.800 0.816 Minimum I/O voltage difference 2 Vd2 - 1.1 1.3 Current capability 2 Io2 1.0 - - Ripple rejection 2 R.R.2 46 52 - Input stability 2 VLINE2 - 5 15 Load stability 2 VLOAD2 - 5 20 Temperature coefficient of output Tcvo2 - 0.01 - *3 voltage 2 Variable pin current IADJ - 0.05 1.0
*3: Operation is guaranteed within these parameters
Technical Note
Unit mA V V A dB mV mV %/C V V A dB mV mV %/C A
Conditions Io1=0 mA, Io2=0mA Io1=50mA Io1=1 A, Vcc=3.8V f=120Hz, ein=0.5Vp-p, Io1=5mA Vcc=4.7514V, Io1=5mA Io1=5mA1 A Io1=5mA,Tj=0C to 85C Io2=50 mA Io2=1 A f=120Hz, ein=0.5 Vp-p, Io2=5mA Vcc=4.7514V, Io2=5mA Io2=5 mA1 A Io2=5mA,Tj=0C to 85C VADJ=0.85V
BA30E00WHFP (Unless otherwise specified, Ta=25C, Vcc1=Vcc2=VEN=5 V, R1=50 k, R2=62.5 k) Parameter Symbol Min. Typ. Max. Unit Conditions Bias current Ib - 0.7 1.6 mA Io1=0mA, Io2=0mA Standby current IST - 0 10 A VEN=GND EN pin on voltage VON 2.0 - - V Active mode EN pin off voltage VOFF - - 0.8 V Standby mode EN pin current IEN - 50 100 A VEN=3.3V [3.3 V output] Output voltage 1 Vo1 3.234 3.300 3.366 V Io1=50mA Minimum I/O voltage difference 1 Vd1 - 0.30 0.60 V Io1=300mA,Vcc=3.135V Output current capacity 1 Io1 0.6 - - A Ripple rejection 1 R.R.1 - 68 - dB f=120Hz, ein=1Vp-p,Io1=100mA Input stability 1 Reg.I1 - 5 30 mV Vcc1=4.116V,Io1=50mA Load stability 1-1 Reg.L1-1 - 30 90 mV Io1=0 mA0.6A Load stability 1-2 Reg.L1-2 - 30 90 mV Vcc1=3.7V,Io1=00.4A Temperature coefficient of output Tcvo1 - 0.01 - %/C Io1=5mA,Tj=0C to 125C *3 voltage 1 [Variable output] (at 1.8 V) Reference voltage VADJ 0.784 0.800 0.816 V Io2=50 mA At Io2=3.3V Minimum I/O voltage difference 2 Vd2 - 0.30 0.60 V Io2=300mA,Vcc1=Vcc2=3.135V Output current capacity 2 Io2 0.6 - - A Ripple rejection 2 R.R.2 - 66 - dB f=120 Hz,ein=1Vp-p,Io2=100mA Input stability 2 Reg.I2 - 5 30 mV Vcc1=Vcc2=4.1V16V,Io2=50mA Load stability 2 Reg.L2 - 30 90 mV Io2=0mA0.6A Temperature coefficient of output Tcvo2 - 0.01 - %/C Io2=5mA,Tj=0C to 125C voltage 2 *3
*3: Operation is guaranteed within these parameters
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2/9
2009.04 - Rev.A
BA3259HFP,BA30E00WHFP
BA3259HFP Electrical Characteristics Curves (Unless otherwise specified, Ta=25C, Vcc=5 V)
4.0 CIRCUIT CURRENTIccmA 3.5
Technical Note
5
ADJ PIN CURRENTIADJ A
60
CIRCUIT CURRENTIBmA
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 14 SUPPLY VOLTAGEVccV
4
50
3
40
2
30
1
20
0 0.0 0.2 0.4 0.6 0.8 1.0 OUTPUT CURRENTIo1A
10 5 6 7 8 9 10 11 12 13 14 SUPPLY VOLTAGEVccV
Fig.1 Circuit Current (with no load)
4.0
Fig.2 Circuit Current vs Load Current Io
1.6 1.4 OUTPUT VOLTAGEVo2V 1.2 1.0 0.8 0.6 0.4 0.2 0.0
Fig.3 ADJ Pin Outflow Current
4.0 3.5 OUTPUT VOLTAGEVo1V 3.0 2.5 2.0 1.5 1.0 0.5 0.0
3.5 OUTPUT VOLTAGEVo1V 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 14 SUPPLY VOLTAGEVccV
0
2
4
6
8
10
12
14
0.0
0.5
1.0
1.5
2.0
2.5
SUPPLY VOLTAGEVccV
OUTPUT CURRENTIo1A
Fig. 4 Input Stability (3.3 V output with no load)
INPUT/OUTPUT VOLTAGE DIFFERENCE dVdV
Fig. 5 Input Stability (Variable output with no load)
1.4
Fig. 6 Load Stability (3.3 V output)
80 RIPPLE REJECTIONR.R.dB 70 60 50 40
R.R.(3.3 V output) R.R.(Variable output :1.5 V)
1.6 1.4 OUTPUT VOLTAGEVo2V 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 OUTPUT CURRENTIo2A
1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0
30 20 10 0 10 100 1000 10000
OUT PUT CURRENT Io1A
FREQUENCYfHz
Fig. 7 Load Stability (Variable output: 1.5 V)
3.35 3.34 OUTPUT VOLTAGEVo1V 3.33 3.32 3.31 3.30 3.29 3.28 3.27 3.26 3.25 -30 -15 0 15 30 45 60
Fig. 8 I/O Voltage Difference (3.3 V output) (3.3 V output, Io1=0 A 1 A)
1.506
CIRCUIT CURRENTIBmA 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5
Fig.9 R.R.
1.504 OUTPUT VOLTAGEVo2V 1.502 1.500 1.498 1.496 1.494 1.492 1.490
75
-30
-15
0
15
30
45
60
75
-30
-15
0
15
30
45
60
75
TEMPERATURETa
TEMPERATURETa
TEMPERATURETa
Fig. 10 Output Voltage vs Temperature (3.3 V output)
Fig. 11 Output Voltage vs Temperature (Variable output: 1.5 V)
Fig. 12 Circuit Current vs Temperature
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3/9
2009.04 - Rev.A
BA3259HFP,BA30E00WHFP
Technical Note
BA30E00WHFP Electrical Characteristics Curves (Unless otherwise specified, Ta=25C, Vcc1=Vcc2=5V)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 12 14 16 18 SUPPLY VOLTAGEVccV
40
ADJ PIN CURRENTIADJA
0.4
35 CIRCUIT CURRENTIccmA 30 25 20 15 10 5 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 OUTPUT CURRENTIoA
CIRCUIT CURRENTIccmA
0.3
0.2
0.1
0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ADJ PIN VOLTAGEVADJ V
Fig.13 Circuit Current (with no load)
4.0 3.5 OUTPUT VOLTAGEVo1V
Fig. 14 Circuit Current vs Load Current Io (Io=0 600 mA)
1.6 1.4
OUTPUT VOLTAGEVo2V
OUTPUT VOLTAGEVo1V
Fig. 15 ADJ Pin Source Current
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 14 16 18 SUPPLY VOLTAGEVccV
1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 12 14 16 18 SUPPLY VOLTAGEVccV
0.0
0. 2 0.4
0.6
0. 8 1.0
1.2 1.4
1.6
OUTPUT CURRENTIo1A
Fig. 16 Input Stability (3.3 V output Io1=600 mA)
INPUT/OUTPUT VOLTAGE DIFFERENCEdVd V
Fig. 17 Input Stability (Variable output: 1.8 V)
0.5
Fig. 18 Load Stability (3.3 V output)
80
Vo2(Variable output:1.8V)
2.0
1.5
0.4
RIPPLE REJECTIONR.R.dB
70 60
Vo1(3.3V output)
OUTPUT VOLTAGEVo2V
0.3
50 40 30 20 10 0
1.0
0.2
0.5
0.1
0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 OUTPUT CURRENTIo2A
0.0 0. 0 0.1 0.2 0.3 0.4 0.5 0.6 OUTPUT CURRENTIoA
100
1000 FREQUENCYfHz
10000
Fig. 19 Load Stability (Variable output: 1.8 V)
3.35
Fig. 20 I/O Voltage Difference (Vcc=3.135 V, 3.3 V output)
1.90 CIRCUIT CURRENTIccmA 1.0 0.9
Fig.21 R.R. (ein=1 Vp-p, Io=100 mA)
OUTPUT VOLTAGEVo1V
OUTPUT VOLTAGEVo2V
3.33
1.85
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
3.30
1.80
3.28
1.75
3.25 -25 -10 5 20 35 50 65 80 95 TEMPERATURETa
1.70 -25 -10 5 20 35 50 65 80 95 TEMPERATURETa
0.0 -25 -10 5 20 35 50 65 80 95 TEMPERATURETa
Fig. 22 Output Voltage vs Temperature (3.3 V output)
Fig. 23 Output Voltage vs Temperature (Variable output: 1.8 V)
Fig. 24 Circuit Current vs Temperature (Io=0 mA)
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4/9
2009.04 - Rev.A
BA3259HFP,BA30E00WHFP
Block Diagrams / Standard Example Application Circuits
VO1 5 3.3V CO1 1F
Reference Voltage GND(Fin) Vcc1
Technical Note
Current Limit
Vcc1
Current Limit
Sat. Prevention
GND FIN
Current Limit Thermal Shutdown
VO2 4 GND 3 ADJ 2 Vcc 1
1.5V CO2 1F R2 R1
Thermal Shut Down Vcc2 Vcc2
Current Limit
Sat. Prevention
VR EF
V IN CIN 3.3F
EN
1
Vcc2
1F
2
Vcc1 3
GND
1F
4
Vo1
47F
5
Vo2
47F
6
ADJ
R2
7 R1
Fig.25 BA3259HFP Block Diagram
Pin No. 1 2 3 4 5 FIN Pin name Vcc ADJ GND Vo2 Vo1 GND Function Power supply pin Variable output voltage detection pin GND pin Variable output pin 3.3 V output pin GND pin Pin No. 1 2 3 4 5 6 7 FIN PIN Vcc1 (3Pin) Vcc2 (2Pin) Vo1 (5Pin) Vo2 (6Pin)
1 2 3 4 5
Fig.26 BA30E00WHFP Block Diagram
Pin name EN Vcc2 Vcc1 GND Vo1 Vo2 ADJ GND Function Output on/off control pin: High active Power supply pin 2 Power supply pin 1 GND pin Power supply pin for 3.3 V output Variable output voltage detection pin (0.8 V to 3.3 V) Variable output voltage detection pin GND pin
PIN Vcc (1Pin) Vo1 (5Pin) Vo2 (4Pin)
External capacitor setting range Approximately 3.3 F 1 F to 1000 F 1 F to 1000 F
TOP VIEW
External capacitor setting range Approximately 1 F Approximately 1 F 47 F to 1000 F 47 F to 1000 F
TOP VIEW
1
234567
HRP5
HRP7
Setting the Output Voltage Vo2 The following output voltage setting method applies to the variable output pin. R2 ) - R2 IADJ Vo2=VADJ ( 1 + R1 VADJ: Output feedback reference voltage (0.8 V typ.) (0.05A typ.: BA3259HFP) IADJ: ADJ pin source current (0.2A typ.: BA30E00WHFP)
Vo2 R2 ADJ IADJ R1 VADJ
R1 BA3259HFP: 1 k to 10 k BA30E00HFP: 1 k to 5 k The above is recommended.
Note:Connect R1 and R2 to make output voltage settings as shown in Fig.25 and Fig.26. Keep in mind that the offset voltage caused by the current (IADJ) flowing out of the ADJ pin will become high if higher resistance is used.
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5/9
2009.04 - Rev.A
BA3259HFP,BA30E00WHFP
Technical Note
Function Explanation 1) Two-input power supply (BA30E00WHFP) The input voltages (Vcc1 and Vcc2) supply power to two outputs (Vo1 and Vo2, respectively). The power dissipation between the input and output pins can be suppressed for each output according to usage. Efficiency comparison: 5V single input vs. 5V/3V two inputs Regulator with single input and two outputs Regulator with two inputs and two outputs (Vo2=1.8V, Io1=Io2=0.3A)
Conventional
5V Vcc REG1 Vo1 3.3 V/0.3 A
Vo2 REG2
1.8 V/0.3 A
Power loss between input and output (Vcc - Vo1) Io1 + (Vcc - Vo2) Io2 = (5 - 3.3) 0.3 + (5 - 1.8) 0.3 = 0.51W + 0.96W = 1.47W Single 5V input results in decreased efficiency
Current
5V Vcc REG1 Vo1 3.3 V/0.3 A
3V REG2
Vo2
1.8 V/0.3 A
Power loss between input and output (Vcc1 - Vo1) Io1 + (Vcc2 - Vo2) Io2 = (5 - 3.3) 0.3 + (5 - 1.8) 0.3 = 0.51W + 0.36W = 0.87W Reduced power loss by 0.6W. Additional 3V input improves efficiency
2) Standby function (BA30E00WHFP) The standby function is operated through the EN pin. Output is turned on at 2.0 V or higher and turned off at 0.8 V or lower.
Thermal Design If the IC is used under the conditions of excess of the power dissipation, the chip temperature will rise, which will have an adverse effect on the electrical characteristics of the IC, such as a reduction in current capability. Furthermore, if the temperature exceeds Tjmax, element deterioration or damage may occur. Implement proper thermal designs to ensure that the power dissipation is within the permissible range in order to prevent instantaneous IC damage resulting from heat and maintain the reliability of the IC for long-term operation. Refer to the power derating characteristics curves in Fig. 27. Power Consumption Pc (W) Calculation Method: BA3259HFP
Vcc IP Vcc
Power Tr
Controller
Vcc
Power Tr
Icc GND
Power consumption of 3.3 V power transistor Pc1=(Vcc - 3.3) Io1 Power consumption of Vo2 power transistor 3.3 V Pc2=(Vcc - Vo2) Io2 output Vo1 Power consumption by circuit current Io1 Pc3=Vcc Icc 0.8 V to Pc=Pc1 + Pc2 + Pc3 3.3 V output * Vcc: Applied voltage Vo2 Io1: Load current on Vo1 side Io2 Io2: Load current on Vo2 side Icc: Circuit current
BA30E00WHFP
Vcc1
Vcc1
Controller
Vcc2
IB1 IB2
Power Tr
Vcc2
Power Tr
Icc1+Icc2 GND
Power consumption of power transistor on Vol1 (3.3 V output) Pc1=(Vcc1 - Vo1) Io1 Power consumption of power transistor on Vo2 (variable output ) 3.3 V Pc2=(Vcc2 - Vo2) Io2 output Io1 Power consumption by circuit current Io1 Pc3=Vcc1 Icc1 + Vcc2 Icc2 0.8 V to Pc=Pc1 + Pc2 + Pc3 3.3 V Io2 output * Vcc1, Vcc2: Applied voltage Io1: Load current on 3.3 V output side Io2 Io2: Load current on variable output side Icc1, Icc2: Circuit currents
The Icc (circuit current) varies with the load. Refer to the above and implement proper thermal designs so that the IC will not be used under conditions of
excess power dissipation Pd under all operating temperatures.
10.0 5.0 ESR [] 2.0 1.0 0.5 0.2
Fig. 27 Ambient Temperature vs. Power Dissipation
10 Board size: 70 mm 70 mm 1.6 mm (with a thermal via incorporated by the board) 9 Board surface area: 10.5 mm 10.5 mm (1) 2-layer board (Backside copper foil area: 15 mm 15 mm) 8 (3) 7.3W (2) 2-layer board (Backside copper foil area: 70 mm 70 mm) (3) 4-layer board (Backside copper foil area: 70 mm 70 mm) 7 6 (2) 5.5W 5 4 3 (1) 2.3W 2 1 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE: Ta [C]
POWER DISSIPATION: Pd [W]
Unstable region
10.0 5.0 2.0 1.0 0.7 0.5 0.2
Unstable region
ESR []
0.1 0.05 0.02 0.01 0
Stable region
Stable region
0.1 0.05 0.02 0.01 0 800 1000
Unstable region
200
400 600 Io [mA]
200
400 600 Io [mA]
800 1000
Fig.28 BA3259HFP ESR
Fig.29 BA30E00WHFP ESR
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6/9
2009.04 - Rev.A
BA3259HFP,BA30E00WHFP
Input / Output Equivalent Circuits BA3259HFP
Vcc Vcc Vo2 Vo1 ADJ
Technical Note
BA30E00WHFP
Vcc1 Vcc1 Vo1 Vcc2 Vo2 ADJ
Fig.30
BA3259HFP I/O Equivalent Circuits
Fig.31
BA30E00WHFP I/O Equivalent Circuit
Explanation of external components BA3259HFP 1) Vcc (Pin 1) It is recommended that a ceramic capacitor with a capacitance of approximately 3.3F is placed between Vcc and GND at a position closest to the pins as possible. 2) Vo (Pins 4 and 5) Insert a capacitor between Vo and GND in order to prevent output oscillation. The capacitor may oscillate if the capacitance changes as a result of temperature fluctuations. Therefore, it is recommended that a ceramic capacitor with a temperature coefficient of X5R or above and a maximum capacitance change (resulting from temperature fluctuations) of 10% be used. The capacitance should be between 1F and 1,000F. (Refer to Fig. 28.) BA33E00HFP 1) Vcc1 (Pin 3) and Vcc2 (Pin 2) Insert capacitors with a capacitance of 1F between Vcc1 and GND and Vcc2 and GND. The capacitance value will vary depending on the application. Be sure to implement designs with sufficient margins. 2) Vo1 (Pin 5) and Vo2 (Pin 6) Insert a capacitor between Vo and GND in order to prevent oscillation. The capacitance of the capacitor may greatly vary with temperature changes, making it impossible to completely prevent oscillation. Therefore, use a tantalum aluminum electrolytic capacitor with a low ESR (Equivalent Serial Resistance) that ensures good performance characteristics at low temperatures. The output oscillates if the ESR is too high or too low. Refer to the ESR characteristics in Fig. 29 and operate the IC within the stable operating region. If there is a sudden load change, use a capacitor with a higher capacitance . A capacitance between 47F and 1,000F is recommended.
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7/9
2009.04 - Rev.A
BA3259HFP,BA30E00WHFP
Technical Note
Notes for use 1) Absolute maximum ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses. 2) GND voltage The potential of GND pin must be minimum potential in all operating conditions. 3) Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. 4) Inter-pin shorts and mounting errors Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together. 5) Actions in strong electromagnetic field Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction. 6) Testing on application boards When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure. Use similar precaution when transporting or storing the IC. 7) Regarding input pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used. 8) Ground wiring patterns When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external components, either. 9) Thermal Shutdown Circuit (TSD) This IC incorporates a built-in thermal shutdown circuit for protection against thermal destruction. Should the junction temperature (Tj) reach the thermal shutdown ON temperature threshold, the TSD will be activated, turning off all output power elements. The circuit will automatically reset once the chip's temperature Tj drops below the threshold temperature. Operation of the thermal shutdown circuit presumes that the IC's absolute maximum ratings have been exceeded. Application designs should never make use of the thermal shutdown circuit. 10) Overcurrent protection circuit An overcurrent protection circuit is incorporated in order to prevention destruction due to short-time overload currents. Continued use of the protection circuits should be avoided. Please note that current increases negatively impact the temperature. 11) Damage to the internal circuit or element may occur when the polarity of the Vcc pin is opposite to that of the other pins inapplications. (I.e. Vcc is shorted with the GND pin while an external capacitor is charged.) Use a maximum capacitance of 1000 mF for the output pins. Inserting a diode to prevent back-current flow in series with Vcc or bypass diodes between Vcc and each pin is recommended.
Resistor
Bypass diode
Transistor (NP N) (NPN)
(PIN B) B C
(PINB) C

Diode for preventing back current flow
E

GND P
N
( PIN A) A

B
B E GND Other adjacent elements
VCC
N P
Output pin
P N
P N N
P
N
P
N P substr P ate
Parasitic element
GND
P substrate P G ND
GND
Parasitic element
Parasitic element
Fig. 32 Bypass diode
Fig. 33 Example of Simple Bipolar IC Architecture
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8/9
2009.04 - Rev.A

(PINA)
BA3259HFP,BA30E00WHFP
Technical Note
B
A
3
2
5
9
H
F
P
-
T
R
Part No.
Part No. 3259 30E00W
Package HFP: HRP5 HRP7
Packaging and forming specification TR: Embossed tape and reel (HRP5, HRP7)
HRP5
9.3950.125 (MAX 9.745 include BURR)
1.0170.2

Tape
1.9050.1
Embossed carrier tape 2000pcs TR
direction the at right when you ( The on the leftishand1pin of product is thethe upperthe right hand hold ) reel and you pull out tape on
8.82 0.1 (5.59)
Quantity Direction of feed
(7.49)
0.8350.2 1.5230.15 10.540.13
8.00.13
1pin
1.2575
1
2
3
4
5
4.5+5.5 -4.5 +0.1 0.27 -0.05 1.72 0.730.1 0.08 S S
0.080.05
Direction of feed
(Unit : mm)
Reel
Order quantity needs to be multiple of the minimum quantity.
HRP7

9.3950.125 (MAX 9.745 include BURR)
1.0170.2
Tape
1.9050.1
Embossed carrier tape 2000pcs TR
The direction is the 1pin of product is at the upper right when you hold
8.820.1 (5.59)
Quantity Direction of feed
1.5230.15
0.8350.2
10.540.13
8.00.13
(7.49)
( reel on the left hand and you pull out the tape on the right hand
1pin
)
0.8875
12 34 5 6 7
+5.5 4.5 -4.5 0.730.1 +0.1 0.27 -0.05 S
0.080.05
1.27
0.08 S
Direction of feed
(Unit : mm)
Reel
Order quantity needs to be multiple of the minimum quantity.
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9/9
2009.04 - Rev.A
Notice
Notes
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